Titanium doped silicon layers with very high concentration
2008; American Institute of Physics; Volume: 104; Issue: 1 Linguagem: Inglês
10.1063/1.2949258
ISSN1520-8850
AutoresJ. Olea, M. Toledano-Luque, David Pastor, G. González-Dı́az, I. Mártil,
Tópico(s)Integrated Circuits and Semiconductor Failure Analysis
ResumoIon implantation of Ti into Si at high doses has been performed. After laser annealing the maximum average of substitutional Ti atoms is about 1018 cm−3. Hall effect measurements show n-type samples with mobility values of about 400 cm2/V s at room temperature. These results clearly indicate that Ti solid solubility limit in Si has been exceeded by far without the formation of a titanium silicide layer. This is a promising result toward obtaining of an intermediate band into Si that allows the design of a new generation of high efficiency solar cell using Ti implanted Si wafers.
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