RF sputtering of epitaxial lead chalcogenide films in argon and krypton plasma
2011; IOP Publishing; Volume: 26; Issue: 5 Linguagem: Inglês
10.1088/0268-1242/26/5/055018
ISSN1361-6641
AutoresС. П. Зимин, I. I. Amirov, Е. С. Горлачев,
Tópico(s)Semiconductor materials and devices
ResumoThe measurements of sputtering etch rates for monocrystalline (111)-oriented epitaxial films of semiconductor binary compounds PbTe, PbSe, PbS in RF high-density low-pressure inductively coupled argon and krypton plasma were performed. Films with 1‐5 μm thickness were grown on Si(111) and BaF2(111) substrates using molecular beam epitaxy. Sputtering was carried out with the energy of Ar + and Kr + ions of 20‐400 eV. The sputtering etch rates of the binary lead chalcogenides are demonstrated to have abnormally high values in comparison with the basic semiconductor materials of microelectronics. The sputtering yield values for PbTe, PbSe, PbS for the average energy of the argon ions of 200 eV are practically equal (0.46 ± 0.05 molecule/ion) and vary linearly with the variation of the ion energy. Substitution of the plasma discharge gas from the argon to krypton does not result in a significant change in the sputtering yield of lead chalcogenides. The physical principles of the observed phenomena are discussed.
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