Sub-bandgap spectral photo-response analysis of Ti supersaturated Si
2012; American Institute of Physics; Volume: 101; Issue: 19 Linguagem: Inglês
10.1063/1.4766171
ISSN1520-8842
AutoresE. García-Hemme, R. García-Hernansanz, J. Olea, David Pastor, A. del Prado, I. Mártil, G. González-Dı́az,
Tópico(s)Advanced Semiconductor Detectors and Materials
ResumoWe have analyzed the increase of the sheet conductance (ΔG□) under spectral illumination in high dose Ti implanted Si samples subsequently processed by pulsed-laser melting. Samples with Ti concentration clearly above the insulator-metal transition limit show a remarkably high ΔG□, even higher than that measured in a silicon reference sample. This increase in the ΔG□ magnitude is contrary to the classic understanding of recombination centers action and supports the lifetime recovery predicted for concentrations of deep levels above the insulator-metal transition.
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