Sulfur passivation of InGaAs/AlGaAs SQW laser (977 nm) facets in alcohol-based solutions
1997; Elsevier BV; Volume: 44; Issue: 1-3 Linguagem: Inglês
10.1016/s0921-5107(96)01817-x
ISSN1873-4944
AutoresВ. Н. Бессолов, М. В. Лебедев, Yuri M. Shernyakov, B. V. Tsarenkov,
Tópico(s)Laser Material Processing Techniques
ResumoSulfide treatment of InGaAs/AlGaAs SWQ lasers (λ = 977 nm) in alcohol-based solutions increases the catastrophic optical damage limit. This increase is largest (50%) when the solvent with the lowest dielectric constant (tert-butanol) is used.
Referência(s)