Properties of TiN–TiC multilayer coatings using plasma-assisted chemical vapor deposition
1999; Elsevier BV; Volume: 116-119; Linguagem: Inglês
10.1016/s0257-8972(99)00149-8
ISSN1879-3347
AutoresDuk-jae Kim, Young‐Rae Cho, Myoung‐Jae Lee, Jung-Mi Hong, Yoon-Kee Kim, Keun‐Ho Lee,
Tópico(s)Copper Interconnects and Reliability
ResumoA multilayer of TiN–TiC has been deposited on commonly used die steels (D2) by the pulsed DC plasma-assisted chemical vapor deposition process. The TiC layer was successfully deposited at 580°C with a gas mixture of TiCl4, CH4, H2 and Ar. A minimum flow of TiCl4 (3.5 g/h) and CH4 gas (18–20 sccm) were used to minimize the excess carbon phases and the chlorine content in the TiC deposited layer. A gas volume ratio of TiCl4/CH4 in the range 0.34–0.38 is required to obtain dense TiC films with minimum excess carbon phases and low chlorine content of less than 2.5 at.%. The Ti/C ratio of the most dense film was measured as about 1.11, which corresponds to the sub-stoichiometric carbon composition of 46 at.%, using Rutherford backscattering spectrometry (RBS) and Auger electron spectroscopy. This implies that a single phase of TiC can be formed near a sub-stoichiometric composition with no extra phases such as carbon and oxide phases in the TiC layer. In addition, the existence of the oxide phase in the TiC layer deposited with low methane gas flow was proved by the RBS measurement.
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