Initial oxidation of Si(100)-(2 × 1)H monohydride surfaces studied by scanning tunneling microscopy/scanning tunneling spectroscopy
1997; Elsevier BV; Volume: 117-118; Linguagem: Inglês
10.1016/s0169-4332(97)80062-1
ISSN1873-5584
AutoresKenji Ohmori, Hiroya Ikeda, Hirotaka Iwano, Shigeaki Zaima, Yukio Yasuda,
Tópico(s)Molecular Junctions and Nanostructures
ResumoAbstract Initial oxidation processes of Si(100)-(2 × 1)H monohydride surfaces have been studied by using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). On the Si(100)-(2 × 1)H surfaces, local density-of-states attributed to a σ-bonding state and a σ-antibonding state of SiH bonds can be observed at − 3.4 eV and + 1.2 eV from the surface Fermi level, respectively. These states are remained after the 2.0 ML oxidation at room temperature and are vanished by subsequent annealing at 450°C. A root-mean-square value of roughness on the as-oxidized surface observed in STM images is about two times larger than that of the annealed surface, which would be influenced by electronic states of SiH bonds. The STS spectra suggest that oxygen atoms adsorb on the backbond sites of Si dimers.
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