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Magnetoresistance and de Haas-van Alphen Effect in CeRu 2 Si 2 and LaRu 2 Si 2

1992; Physical Society of Japan; Volume: 61; Issue: 3 Linguagem: Inglês

10.1143/jpsj.61.960

1347-4073

Yoshichika Ōnuki, Izuru Umehara, Ariane Keiko Albessard, Takao Ebihara, Kazuhiko Satoh,

Inorganic Chemistry and Materials

We have measured the magnetoresistance and de Haas-van Alphen (dHvA) effect in CeRu 2 Si 2 and LaRu 2 Si 2 . From the results of magnetoresistance, CeRu 2 Si 2 is concluded to be a compensated metal, possibly possessing an open orbit along the c -axis of the tetragonal structure. On the other hand, LaRu 2 Si 2 is an uncompensated metal, showing the saturated magnetoresistance. These results imply that the 4 f electrons in CeRu 2 Si 2 are itinerant. In the dHvA experiments of LaRu 2 Si 2 , we have found a large ellipsoidal Fermi surface which occupies roughly half of the Brillouin zone in volume. On the other hand, CeRu 2 Si 2 possesses multiply connected Fermi surfaces in part, although main Fermi surfaces are not observed yet.