High rate deposition of alumina films by reactive gas flow sputtering
1993; Elsevier BV; Volume: 59; Issue: 1-3 Linguagem: Inglês
10.1016/0257-8972(93)90078-3
ISSN1879-3347
Autores Tópico(s)Semiconductor materials and devices
ResumoA new sputter which enables higher deposition rates than standard magnetron sputtering, especially for oxide films, has been developed. The deposition process typically works at several tenths of a millibar and requires no high vacuum environment. It is based on a hollow cathode discharge in combination with a suitable directed gas flow. The particular route of the gas flow also strongly decreases the residual gas influence on the target and substrate. For practical applications a linear sputter source of length 10 cm and width 2 cm which allows the coating of an area of approximately 50 cm2 has been tested. Up to now deposition rates of 10 μm h-1 at 1.4 kW d.c. power have been realized. The total pressure and gas flow were in the region of 0.4 mbar and 800 sccm (standard cm3 min-1) respectively. In spite of the rather high working pressure and the intense argon gas flow towards the substrate, the argon content of the films is very low (0.01 wt.% or less). The concept of the linear hollow cathode with two parallel rectangular targets was found to be simple in construction and operation and can be easily extended in two dimensions for the coating of large areas.
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