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Electroluminescence in AlGaN/GaN High Electron Mobility Transistors under High Bias Voltage

2002; Institute of Physics; Volume: 41; Issue: Part 1, No. 4A Linguagem: Inglês

10.1143/jjap.41.1990

1347-4065

Takeshi Nakao, Yutaka Ohno, M. Akita, Shigeru Kishimoto, K. Maezawa, Takashi Mizutani,

Ga2O3 and related materials

Electroluminescence (EL) in GaN high electron mobility transistors (HEMTs) biased at high drain-source voltages was investigated. The electroluminescence was observed at the drain edge where the high-field region is formed. This is quite different from the case of GaAs HEMTs where luminescence was observed at the gate edge. EL spectroscopy was also performed. The luminescence with the wavelength of visible to near-infrared light, the energy of which was less than the band gap energy, was observed with polarization in the direction parallel to the drain current.