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Elaboration of Bi2Te3 by metal organic chemical vapor deposition

1997; Elsevier BV; Volume: 303; Issue: 1-2 Linguagem: Inglês

10.1016/s0040-6090(97)00089-8

1879-2731

Alain Giani, F. Pascal‐Delannoy, Alexandre Boyer, A. Foucaran, M. Gschwind, P. Ancey,

Cold Atom Physics and Bose-Einstein Condensates

Bi2Te3 layers were elaborated for the first time using metal organic chemical vapor deposition. The films composition is stoichiometric when the following conditions are verified: substrate temperature lower than 500 °C, VI/V ratio greater than 3, TMBi partial pressure lower than 2 × 10−4 atm. By X-ray diffraction and MEB observation, we noticed the polycrystalline structure of the layers. The high thermoelectric power (+ 190 V K−1 for the n-type layer and −94 V K−1 for the n-type layer) of this material is promising for device applications.