Electrical Properties of Yttrium‐Aluminum‐Silicon Oxynitride Glasses
1980; Wiley; Volume: 63; Issue: 3-4 Linguagem: Inglês
10.1111/j.1151-2916.1980.tb10689.x
ISSN1551-2916
AutoresC. J. LEEDECKE, Ronald E. Loehman,
Tópico(s)Phase-change materials and chalcogenides
ResumoThe ac electrical properties of several Y‐Al‐Si oxynitride glasses were measured as a function of temperature at 20° to 625°C in the frequency range 50 to 10 5 Hz. The low‐field dc conductivity was also determined. Dispersions in the dielectric constant associated with the peaks in the tan δ curves were observed in all cases. The peaks in tan δ shifted to higher frequencies with increasing temperature. Below ∼400°C, the ac conductivity was proportional to ω n with 0.5< n <l. The characteristic relaxation time, T 0 , and the density of defect states were estimated using a model consisting of carrier hopping over a potential barrier. At all temperatures the dc conductivity could be described by an Arrhenius equation.
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