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Pressure-Induced Dielectric Change from Relaxor to Antiferroelectric Behavior in Disordered Pb(In 1/2 Nb 1/2 )O 3

1997; Physical Society of Japan; Volume: 66; Issue: 7 Linguagem: Inglês

10.1143/jpsj.66.1920

1347-4073

Naohiko Yasuda, Hidehiro Ohwa, Jun Oohashi, Kenji Nomura, Hikaru Terauchi, Makoto Iwata, Yoshihiro Ishibashi,

Microwave Dielectric Ceramics Synthesis

The dielectric properties of Pb(In 1/2 Nb 1/2 )O 3 (abbreviated as PIN) single crystal were investigated under hydrostatic pressures up to 0.7 GPa. The ordered PIN was confirmed to be antiferroelectric by observation of clear P - E double hysteresis loops below the transition temperature. There is a striking pressure effect in the disordered PIN. The relaxor behavior becomes less notable with increasing pressure and disappears at 0.4 GPa. At pressures above 0.4 GPa, the normal phase transition without dielectric dispersion in the low frequency range takes place and with increasing pressure, the temperature T m , indicating the maximum of the dielectric constant, ε rm ′ , increases at a rate of 150 K/GPa and the ε rm ′ decreases. Such dielectric phenomena with pressure are similar to those observed in antiferroelectric PbZrO 3 .