Binding state transformation in high temperature synthesized CN thin films
1999; Elsevier BV; Volume: 8; Issue: 2-5 Linguagem: Inglês
10.1016/s0925-9635(98)00338-0
ISSN1879-0062
AutoresYoke Khin Yap, S. Kida, Toshihiro Aoyama, Yusuke Mori, T. Sasaki,
Tópico(s)Semiconductor materials and devices
ResumoAbstract We have obtained tetrahedral carbon nitride (CN) films by r.f. plasma pulsed laser deposition at 600 °C. As we increase the magnitude of the negative d.c. bias voltage of the Si substrate, predominant formation of tetrahedral CN bonds and suppression of graphite-like CN state are found. By means of such a bias voltage, CN films with adaptable fraction of graphite-like and tetrahedral CN bonds can be tailored according to requirement. All these films are stable to annealing at 800 °C. Likewise, annealing of CN films prepared at room temperature (RT) revealed a novel transformation of CN binding state. The graphite-like CN bond is ruptured and converted into the aliphatic-like CN state. The tetrahedral CN bond contained inside the RT-prepared samples remained after annealing.
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