Portal de Periódicos da CAPES

Response of machining-damaged single-crystalline silicon wafers to nanosecond pulsed laser irradiation

2007; IOP Publishing; Volume: 22; Issue: 4 Linguagem: Inglês

10.1088/0268-1242/22/4/016

1361-6641

Jiwang Yan, Tooru Asami, Tsunemoto Kuriyagawa,

Diamond and Carbon-based Materials Research

Ultraprecision diamond-machined silicon wafers have been irradiated by a nanosecond pulsed Nd:YAG laser. The results indicate that at specific laser energy intensity levels, the machining-induced subsurface damage layer of silicon has been reconstructed to a perfect single-crystalline structure identical to the bulk. Laser irradiation causes two effects on silicon: one is the epitaxial regrowth of the near-surface amorphous layer, and the other is the complete removal of the dislocations from the crystalline layer. It is the dislocation-free crystalline region that serves as the seed layer to recrystallize the amorphous layer, enabling excellent crystalline perfection. These findings may offer practical alternatives to current chemo-mechanical processing methods for silicon wafers.