Room-temperature 1.54-μm electroluminescence from Er-doped Si-rich SiO2 films deposited on p-Si by magnetron sputtering
2002; Elsevier BV; Volume: 409; Issue: 2 Linguagem: Inglês
10.1016/s0040-6090(02)00069-x
ISSN1879-2731
AutoresFusong Yuan, G. Z. Ran, Y. Chen, L.H. Dai, Yijuan Qiao, Zhanhong Ma, W. H. Zong, G. G. Qin,
Tópico(s)Thin-Film Transistor Technologies
ResumoEr-doped Si-rich SiO2 (SRSO:Er) films with excess silicon contents of 0, 10, 20 and 30% were deposited on p-Si substrates using the magnetron sputtering technique, and then Au/SRSO:Er/p-Si light-emitting diodes (LEDs) were fabricated after the SRSO:Er/p-Si samples were annealed separately at 600, 700, 800, 900 and 1000 °C. Room temperature 1.54-μm electroluminescence (EL) from the Au/SRSO:Er/p-Si LEDs was observed when the forward bias was above 4 V. It was found that excess silicon with a proper content in a SRSO:Er film annealed at a suitable temperature can evidently enhance EL intensity of the LED made of the film. The optimum annealing temperatures for enhancing EL intensity were 900, 900, 800 and 700 °C for the SRSO:Er films containing 0, 10, 20 and 30% excess silicon, respectively. The 1.54-μm EL intensity of the Au/SRSO:Er/p-Si LED made of a SRSO:Er film with 20% excess silicon being annealed at 800 °C was the most intense.
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