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Interface Recombination Current in Type II Heterostructure Bipolar Diodes

2014; American Chemical Society; Volume: 6; Issue: 17 Linguagem: Inglês

10.1021/am504454g

1944-8252

Marius Grundmann, Robert Karsthof, Holger von Wenckstern,

Thin-Film Transistor Technologies

Wide-gap semiconductors are often unipolar and can form type II bipolar heterostructures with large band discontinuities. We present such diodes with very high rectification larger than 1 × 1010. The current is assumed to be entirely due to interface recombination. We derive the ideality factor for both symmetric and asymmetric diodes and find it close to 2 in agreement with experimental data from NiO/ZnO and CuI/ZnO type II diodes. The comparison with experimental results shows that the actual interface recombination rate is orders of magnitude smaller than its possible maximum value.