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Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy

2004; American Institute of Physics; Volume: 84; Issue: 9 Linguagem: Inglês

10.1063/1.1650906

1520-8842

Mhairi Gass, Adam J. Papworth, T.B. Joyce, T.J. Bullough, Paul R. Chalker,

Semiconductor materials and devices

Imaging of the electronic structure of a GaInNAs/GaAs quantum well has been investigated by mapping the variation in the plasmon frequency using an electron energy-loss spectrometer on a dedicated field emission gun scanning transmission electron microscope. Kramers–Kronig analysis of the single scattered low-loss region yields a measure of the joint effective valence electron density. The average electron density has been used to provide a direct measurement of the electron effective mass of GaInNAs. The reduced mass was found to be 0.0874m0 for a 7 nm thick Ga0.9In0.1N0.04As0.96 quantum well.