Portal de Periódicos da CAPES

Growth and characterization of CuP2 single crystals

1990; Elsevier BV; Volume: 106; Issue: 4 Linguagem: Inglês

10.1016/0022-0248(90)90037-l

1873-5002

Ch. Kloc, M. Lux‐Steiner, M. Keil, Joachim Baumann, Gary L. Doll, E. Bücher,

Surface and Thin Film Phenomena

CuP2 single crystals have been grown by chemical vapor phase transport in a closed tube system. Temperature dependent characterization of these crystals were carried out with respect to the structural, optical and electrical properties. With the lattice constants a0(T) = 5.794 (1+3.9x10-6T) Å, b0(T) = 4.799 (1+6.0x10-6T) Å and c0(T) = 7.511 (1+4.3x10-6T)Å, the lattice of the monoclinic crystals exhibits the largest thermal expansion coefficient perpendicular to the (010) plane. However, cleavage occurs parallel to the (100) plane. The optical bandgap varies with temperature as Eg(T) = Eg(0)-4.4x10-4eV K-1T2 (200 K+T)-1 For the first time photoluminescence of CuP2 could be observed in the excitonic wavelength region at 1.7K. With a net hole concentration of 2x1017-3x10-18cm-3 at room temperature and a weakly temperature dependent Hall mobility of 60 cm2 V- 1 s-1, the as-grown CuP2 crystals might be both degenerate and compensated.