Epitaxially stacked lasers with Esaki junctions: A bipolar cascade laser
1997; American Institute of Physics; Volume: 71; Issue: 26 Linguagem: Inglês
10.1063/1.120408
ISSN1520-8842
AutoresJean-Charles Garcia, E. Rosencher, Ph. Collot, Nicolas Laurent, J.-L. Guyaux, B. Vinter, J. Nagle,
Tópico(s)Spectroscopy and Laser Applications
ResumoWe present a two-color (956 and 985 nm) InGaAs/AlGaAs laser structure epitaxially stacked through a low-resistance (10−5–10−4 Ω cm2) Esaki junction, exhibiting two threshold characteristics. It is shown that this structure can be considered as a bipolar cascade laser.
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