Stranski-Krastanov Growth of InN Nanostructures on GaN Studied by RHEED, STM and AFM
2002; Wiley; Volume: 194; Issue: 2 Linguagem: Inglês
10.1002/1521-396x(200212)194
ISSN1521-396X
AutoresC. N�renberg, Rachel A. Oliver, M.G. Martı́n, L. Allers, Martin R. Castell, G. A. D. Briggs,
Tópico(s)Nanowire Synthesis and Applications
ResumoThe growth of self-assembled InN nanostructures on GaN by MBE has been studied using two different nitrogen sources. Stranski-Krastanov growth may be achieved but is highly sensitive to the V:III ratio as well as coverage and temperature. The size and shape of the resultant nanostructures depend on the nitrogen source used. Using thermally cracked ammonia, Stranski-Krastanov growth occurred only for thin layers (up to 8 monolayers) at high V:III ratios, as observed by RHEED and AFM. The sensitivity of the growth to the V:III ratio may be explained in terms of the interplay between equilibrium thermodynamics and growth kinetics. Similar experiments at higher V:III ratios were performed using a modified nitrogen plasma source. Stranski-Krastanov growth occurred and was observed in-situ by RHEED. The as-grown nanostructures were imaged in-vacuo by elevated-temperature STM, showing the dependence of island size and distribution on the InN coverage.
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