Artigo Revisado por pares

Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

2012; Institute of Physics; Volume: 5; Issue: 12 Linguagem: Inglês

10.1143/apex.5.122101

ISSN

1882-0786

Autores

Toru Kinoshita, Keiichiro Hironaka, Toshiyuki Obata, Toru Nagashima, Rafael Dalmau, R. Schlesser, Baxter Moody, Jinqiao Xie, Shin‐ichiro Inoue, Yoshinao Kumagai, Akinori Koukitu, Zlatko Sitar,

Tópico(s)

Plasma Diagnostics and Applications

Resumo

AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) were fabricated on AlN substrates. The AlN substrates were prepared by growing thick hydride vapor phase epitaxy (HVPE)-AlN layers on bulk AlN substrates prepared by physical vapor transport (PVT). After growing an LED structure, the PVT-AlN substrates were removed by mechanical polishing. This process allowed the fabrication of DUV-LEDs on HVPE-AlN substrates with high crystalline quality and DUV optical transparency. The DUV-LEDs exhibited a single emission peaking at 268 nm through the HVPE-AlN substrates. The output power as high as 28 mW was obtained at an injection current of 250 mA.

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