MOCVD grown CdTe investigated by photoluminescence and PAC
1996; Elsevier BV; Volume: 159; Issue: 1-4 Linguagem: Inglês
10.1016/0022-0248(95)00825-x
ISSN1873-5002
AutoresT. Filz, J. Hamann, R. S. Muller, V. Ostheimer, H. Wolf, Th. Wichert,
Tópico(s)Quantum Dots Synthesis And Properties
ResumoComparative investigations, using perturbed γγ-angular correlation and photoluminescence spectroscopy, were performed on CdTe films grown on GaAs substrates by MOCVD. The incorporation of the radioactive probe atoms 111In into the CdTe films was done via diffusion, implantation, and, for the first time, by in situ doping during MOCVD growth. The latter process was realised by using a modified MOCVD reactor with the precursor trimethylindium (TMIn) labelled with the radioactive isotope 111In. The influence of the doping procedure and the thermal treatment, including annealing under Cd or Te overpressure, was investigated. For two donor-acceptor pairs, involving the donor In and the acceptors As or the Cd vacancy, the results of both techniques were correlated.
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