Long lifetimes of excitons in stressed Ge
1981; Elsevier BV; Volume: 37; Issue: 4 Linguagem: Inglês
10.1016/0038-1098(81)90368-9
ISSN1879-2766
AutoresL. J. Schowalter, F. M. Steranka, M. B. Salamon, J. P. Wolfe,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoAbstract We have measured an extremely long lifetime of 1.5 ms for strain-confined excitons in Ge below 3.2 K. This compares favorably with our predicted radiative lifetime of 2.0 ms in stressed Ge. Above 3.2 K, a rapid decrease in the exciton lifetime is observed with increasing temperature, concurrent with an exponential decrease in the observed luminescence intensity. Three models for thermally-activated loss of strain-confined excitons are considered as possible explanations. Also, the liquid-gas transition is examined by spatial scanning techniques.
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