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Photo-Induced Current Transient Spectroscopy in High-Resistivity Bulk Material. II. Influence of Non-Exponential Transient on Determination of Deep Trap Parameters

1983; Institute of Physics; Volume: 22; Issue: 4R Linguagem: Inglês

10.1143/jjap.22.629

1347-4065

Osamu Yoshie, Mitsuo Kamihara,

Integrated Circuits and Semiconductor Failure Analysis

Computer simulation and experimental study on the influence of non-exponential current transient upon the determination of the trap-activation energies and the capture cross sections in PICTS have been performed. The condition of sampling times t 1 and t 2 ( t 1 < t 2 ) should not be such that t 1 is fixed and t 2 is varied since large errors are introduced into the obtained trap-parameters, while the condition that t 2 / t 1 is fixed and both t 1 and t 2 are varied, should be used in order to minimize the errors. By using a computer controlled multi-channel PICTS system which has a large number of sampling gates, the experimental study on the influence of non-exponential transient upon PICTS in a high-resistivity bulk CdS single crystal has been made possible. The results obtained experimentally in the bulk CdS for the non-exponential case have been found to agree well with the predictions of the simulation.