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Single crystal ß‐Si 3 N 4 fibers obtained by self‐propagating high temperature synthesis**

1995; Volume: 7; Issue: 8 Linguagem: Inglês

10.1002/adma.19950070815

1521-4095

Miguel Á. Rodríguez, Nikolay S. Makhonin, Juan A. Escriña, Inna P. Borovinskava, M.I. Osendi, María F. Barba, Juan Eugenio Iglesias, José S. Moya,

Semiconductor materials and devices

The growth of single crystal β‐silicon nitride fibers (see Figure) several millimeters long through the application of self‐propagating high‐temperature synthesis is demonstrated. Advantages include the igh purity of the fibers obtained, the fact that the fibers are stable up to 2000°C, and the low cost of the SHS process magnified image .