Low-loss Al-free waveguides for unipolar semiconductor lasers
1999; American Institute of Physics; Volume: 75; Issue: 25 Linguagem: Inglês
10.1063/1.125491
ISSN1520-8842
AutoresCarlo Sirtori, P. Kruck, S. Barbieri, H. Page, J. Nagle, Mattias Beck, Jérôme Faist, U. Oesterlé,
Tópico(s)Semiconductor Lasers and Optical Devices
ResumoA promising waveguide design for midinfrared (λ=5–20 μm) unipolar semiconductor lasers is proposed and demonstrated in (Al)GaAs quantum cascade structures. In the latter, the active region is embedded between two GaAs layers, with an appropriate doping profile which allows optical confinement, with low waveguide losses and optimal heat dissipation. Low internal cavity losses of 20 cm−1 have been measured using different techniques for lasers with emission wavelength at ∼9 μm. At 77 K, these devices have peak output power in excess of 550 mW and threshold current of 4.7 kA/cm2.
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