HPHT synthesis and electrical properties of AgSbTe2–Ag2Te thermoelectric alloys
2008; Elsevier BV; Volume: 62; Issue: 17-18 Linguagem: Inglês
10.1016/j.matlet.2008.02.039
ISSN1873-4979
AutoresTaichao Su, Xiaopeng Jia, Hongan Ma, Zang Chuan-Yi, Lin Zhou, Jiangang Guo, Nan Dong,
Tópico(s)Chalcogenide Semiconductor Thin Films
ResumoIn this letter, p-type pseudo-binary AgSbTe2–Ag2Te thermoelectric alloys with the composition of (AgSbTe2)1 − x(Ag2Te)x (x = 0~0.2) were prepared by high pressure and high temperature (HPHT) method. The samples are near single phase AgSbTe2 with a small quantity of impurities including Sb2Te3 and Ag2Te. The electrical properties including the Seebeck coefficient and the electrical resistivity depending on synthetic pressure and the Ag2Te content x were studied at room temperature. The measurement results show that the Seebeck coefficient and the electrical resistivity for (AgSbTe2)1 − x(Ag2Te)x decrease with an increase of the synthetic pressure and x which indicate that high pressure combining alloying with Ag2Te could modulate the electrical properties of Ag–Sb–Te system effectively.
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