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EPR characterization of optical-quality AgGaS2 grown from the melt

1978; American Institute of Physics; Volume: 32; Issue: 11 Linguagem: Inglês

10.1063/1.89906

1520-8842

H. J. von Bardeleben, A. Goltzené, C. Schwab, Robert S. Feigelson,

Quantum Dots Synthesis And Properties

The EPR study of optical-quality AgGaS2 has proven the existence of the point defects Ni3+, Fen+, (n⩽2), a shallow donor (ED<0.11 eV), and one associated defect Fe3+-X, the charge states of which are all photosensitive. The effectiveness of the standard annealing procedures, employed to obtain crystals of low absorption in the 0.5–12-μm range, is associated with an oxidation of these transition-metal impurities.