Continuous-wave operation of photonic band-edge laser near 1.55 µm on silicon wafer
2007; Optica Publishing Group; Volume: 15; Issue: 12 Linguagem: Inglês
10.1364/oe.15.007551
ISSN1094-4087
AutoresG. Vecchi, Fabrice Raineri, I. Sagnes, A. M. Yacomotti, P. Monnier, T. J. Karle, K.-H. Lee, Rémy Braive, L. Le Gratiet, S. Guilet, G. Beaudoin, A. Taneau, S. Bouchoule, A. Levenson, R. Raj,
Tópico(s)Optical Coatings and Gratings
ResumoWe report on the continuous-wave operation of a band edge laser at room temperature near 1.55 mum in an InGaAs/InP photonic crystal. A flat dispersion band-edge photonic mode is used for surface normal operation. The photonic crystal slab is integrated onto a Silicon chip by means of Au/In bonding technology, which combines two advantages, efficient heat sinking and broad band reflectivity.
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