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Band-gap engineered digital alloy interfaces for lower resistance vertical-cavity surface-emitting lasers

1993; American Institute of Physics; Volume: 63; Issue: 25 Linguagem: Inglês

10.1063/1.110156

1520-8842

M.G. Peters, B.J. Thibeault, D.B. Young, J.W. Scott, Frank H. Peters, A. C. Gossard, L.A. Coldren,

Semiconductor Quantum Structures and Devices

We report on a technique of grading the heterobarrier interfaces of a p-type distributed Bragg reflector mirror to reduce the operating voltages of vertical-cavity surface-emitting lasers (VCSELs). We report VCSELs with lower operating voltages (2–3 V) and record continuous-wave room-temperature power-conversion efficiencies (17.3%). We experimentally demonstrate that by using a parabolic grading and modulating the doping correctly, a flat valence band is generated that provides low voltage hole transport. The low resistance mirrors are achieved using low Be doping, digital-alloy grading and 600 °C growth temperatures.