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High Detection Sensitivity of Ultraviolet 4H-SiC Avalanche Photodiodes

2007; IEEE Photonics Society; Volume: 43; Issue: 12 Linguagem: Inglês

10.1109/jqe.2007.905031

1558-1713

Xiaogang Bai, Xiangyi Guo, Dion McIntosh, Han-Din Liu, Joe C. Campbell,

Ga2O3 and related materials

We report 4H-SiC p-i-n avalanche photodiodes (APDs) with very low dark current. When biased for a photocurrent gain M of 1000, a 100-mum-diameter device exhibits dark current of 5 pA (63 nA/cm 2 ), corresponding to primary multiplied dark current of 5 fA (63 pA/cm 2 ). The peak responsivity at unity gain is 93 mA/W (external quantum efficiency = 41%) at lambda = 280 nm. The excess noise factor corresponds to k = 0.1. Detection of several tens of femtowatts of ultraviolet light is reported.