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MOCVD growth and electrical studies of p-type AlGaN with Al fraction 0.35

2006; Elsevier BV; Volume: 289; Issue: 2 Linguagem: Inglês

10.1016/j.jcrysgro.2005.11.109

1873-5002

Hongbo Yu, Erkin Ulker, Ekmel Özbay,

Metal and Thin Film Mechanics

Abstract We present a study on the high performance p-type Al x Ga 1− x N ( x = 0.3 5 ) layers grown by low-pressure metalorganic chemical vapor deposition on AlN template/sapphire substrate. The influence of growth conditions on the p-type conductivity of the Al x Ga 1− x N ( x = 0.3 5 ) alloy is investigated. From the Hall effect and I – V transmission line model measurements, a p-type resistivity of 3.5 Ω cm for Al x Ga 1− x N ( x = 0.3 5 ) epilayers are achieved. To the best of our knowledge, this is the lowest resistivity ever measured for the uniform p-type AlGaN with Al fraction higher than 0.3. The Mg and impurities (O, C and H) of the atom concentration in the epi-layers are analyzed by means of SIMS depth profiles, which reveal the dependence of impurities incorporation on the III elements and growth temperature.