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M Fe center: A configurationally bistable defect in InP: Fe

1984; American Physical Society; Volume: 30; Issue: 10 Linguagem: Inglês

10.1103/physrevb.30.5817

1095-3795

M. Levinson, Michael Stavola, P. Besomi, W. A. Bonner,

Phase-change materials and chalcogenides

We report the observation of a defect in Fe-doped InP which can exist in either of two configurations, for the same charge state. Each configuration exhibits distinct electronic and optical properties. Thermally stimulated capacitance, capacitance transient spectroscopy, and photocapacitance were used to study the properties of the defect in each configuration, and the kinetics of the reversible transformations between configurations. The unique properties of the defect are discussed.