Atomic Layer Deposition of Platinum Thin Films
2003; American Chemical Society; Volume: 15; Issue: 9 Linguagem: Inglês
10.1021/cm021333t
ISSN1520-5002
AutoresTitta Aaltonen, Mikko Ritala, Timo Sajavaara, J. Keinonen, Markku Leskelä,
Tópico(s)Catalytic Processes in Materials Science
ResumoPlatinum thin films were grown at 300 °C by atomic layer deposition (ALD) using (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) and oxygen as precursors. The films had excellent uniformity, low resistivity, and low-impurity contents. Structural studies by X-ray diffraction showed that the films were strongly (111) oriented. Growth rates of 0.45 Å cycle-1 were obtained with 4 s total cycle times. The film thickness was found to linearly depend on the number of the reaction cycles. Also, the possible reaction mechanism is discussed.
Referência(s)