Computer analysis of punch-through in MOSFETs
1979; Elsevier BV; Volume: 22; Issue: 1 Linguagem: Inglês
10.1016/0038-1101(79)90172-2
ISSN1879-2405
Autores Tópico(s)Silicon and Solar Cell Technologies
ResumoA two-dimensional numerical analysis is made for MOSFETs having short channel lengths. The short channel MOSFET is especially characterized by the existence of the punch-through current which cannot be explained by the one-dimensional MOSFET models. The two-dimensional analysis makes clear the following facts relating about the punch-through mechanism. The punch-through is a condition in which the depletion layers of the source and the drain connect mutually at the deep region in the substrate even in equilibrium. The punch-through current is injected through the saddle point of the intrinsic potential into the drain region by the electric field from the drain, at the low gate voltages.
Referência(s)