Preparation and Characterization of Fe-Based III-V Diluted Magnetic Semiconductor (Ga, Fe)As
2000; Institute of Physics; Volume: 39; Issue: 1A Linguagem: Inglês
10.1143/jjap.39.l9
ISSN1347-4065
AutoresS. Haneda, Masaaki Yamaura, Y. Takatani, Kazuhiko Hara, Shin-ichi Harigae, Hiroo Munekata,
Tópico(s)Magnetic and transport properties of perovskites and related materials
ResumoThe Fe-based III-V diluted magnetic semiconductor (III-V-DMS), (Ga, Fe)As, has been grown successfully on GaAs(001) substrates by molecular beam epitaxy at a substrate temperature T s ranging from 260–350°C. Secondary ion mass spectroscopy analysis has exhibited that the film composition can be expressed by Ga 1- x Fe x As. X-ray diffraction data have indicated that the lattice constant of Ga 1- x Fe x As decreases with increasing Fe composition. Magnetization data have exhibited that epilayers are predominantly paramagnetic, however, their detailed behavior differs from that of Mn-based DMS systems. The work has demonstrated that the physical properties of III-V-DMS can be changed significantly by the choice of transition metals.
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