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Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors

2008; American Institute of Physics; Volume: 93; Issue: 5 Linguagem: Inglês

10.1063/1.2966145

1520-8842

Jaechul Park, Ihun Song, Sunil Kim, Sang‐Wook Kim, Changjung Kim, Jae-Cheol Lee, Hyung-Ik Lee, Eunha Lee, Huaxiang Yin, Kyoung-Kok Kim, Kee-Won Kwon, Youngsoo Park,

Transition Metal Oxide Nanomaterials

We have demonstrated a self-aligned top-gate amorphous gallium indium zinc oxide thin film transistor (a-GIZO TFT). It had a field effect mobility of 5 cm2/V s, a threshold voltage of 0.2 V, and a subthreshold swing of 0.2 V/decade. Ar plasma was treated on the source/drain region of the a-GIZO active layer to reduce the series resistance. After Ar plasma treatment, the surface of the source/drain region was divided into In-rich and In-deficient regions. The a-GIZO TFT also had a constant sheet resistance of 1 kΩ/◻ for a film thickness of over 40 nm. The interface between the source/drain Mo metal and the Ar plasma-treated a-GIZO indicated a good Ohmic contact and a contact resistivity of 50 μΩ cm2.