Energy transfer and charge carrier capture processes in wide‐band‐gap scintillators
2007; Wiley; Volume: 204; Issue: 3 Linguagem: Inglês
10.1002/pssa.200673866
ISSN1862-6319
AutoresM. Nikl, V. V. Laguta, A. Vedda,
Tópico(s)Atomic and Subatomic Physics Research
ResumoAbstract Electron and hole trapping phenomena below room temperature were studied by simultaneous use of electron paramagnetic resonance (EPR) and thermostimulated luminescence (TSL) experiments in Ce‐doped YAlO 3 , Y 3 Al 5 O 12 and Lu 3 Al 5 O 12 single crystals. Charge‐carrier trapping associated with O – centers and antisite Y(Lu) Al defects in perovskite and garnet structures, respectively, was evidenced by EPR and associated with the dominant TSL peaks. Existence of F + centers was proved by EPR in YAlO 3 . A Ce 3+ ion at the Al site and spatially correlated Ce Lu and Lu Al centers were evidenced in Lu 3 Al 5 O 12 by the same method. Spatial correlation of the latter two centers is further supported by the associated tunneling‐driven radiative recombination process evidenced by phosphorescence decay. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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