Thin-beam bulk micromachining based on RIE and xenon difluoride silicon etching
1998; Elsevier BV; Volume: 66; Issue: 1-3 Linguagem: Inglês
10.1016/s0924-4247(98)01701-4
ISSN1873-3069
AutoresRisaku Toda, Kazuyuki MINAMI, Masayoshi Esashi,
Tópico(s)Advanced Surface Polishing Techniques
ResumoA new process for fabricating thin mechanical beam structures from single-crystal silicon has been developed. Lateral and vertical dimensions of the beam can be precisely defined. The beam is positioned in the middle of a silicon wafer at exactly equal distances from both sides. The beam design is not limited by crystal orientations of silicon. The silicon beam structure is essentially stress free because the whole structure is made of uniformly doped single-crystal silicon. This thin-beam process offers significantly expanded design freedom to bulk silicon micromachining. Additionally, a silicon dioxide structure with very high aspect ratio has been fabricated with a similar technique.
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