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Low-threshold InGaAsP ridge waveguide lasers at 1.3 µm

1983; IEEE Photonics Society; Volume: 19; Issue: 8 Linguagem: Inglês

10.1109/jqe.1983.1072028

1558-1713

I. P. Kaminow, L.W. Stulz, Jong Soo Ko, A.G. Dentai, R. E. Nahory, J. C. DeWinter, R. L. Hartman,

Semiconductor Quantum Structures and Devices

The ridge waveguide configuration is shown to provide reliable low-threshold fundamental-transverse-mode lasers that are readily fabricated. Two variants are described: in the simple ridge laser, the 1.3 μm bandgap active layer is sandwiched between InP layers and in the cladded ridge, the active layer is surrounded by 1.1 μm bandgap InGa AsP. Thresholds as low as 34 mA and efficiencies as high as 66 percent are observed. Output power is linear to more than 12 mW. Several lasers have been operated at 30°C for over 1500 h without measurable degradation. Selected lasers exhibit stabilized longitudinal mode behavior over extended temperature and current ranges. The potential manufacturability of this device is its most attractive feature.