Ferromagnetism and magnetoresistance of Co–ZnO inhomogeneous magnetic semiconductors
2004; American Institute of Physics; Volume: 84; Issue: 13 Linguagem: Inglês
10.1063/1.1690881
ISSN1520-8842
AutoresShishen Yan, Cong Ren, X. Wang, Yan Xin, Zhixian Zhou, Liangmo Mei, Min Ren, Y. X. Chen, Y. H. Liu, Hamid Garmestani,
Tópico(s)Copper-based nanomaterials and applications
ResumoCo–ZnO inhomogeneous magnetic semiconductor thin films were synthesized on the subnanometer scale by sputtering. Room temperature ferromagnetism with high magnetization was found. Large negative magnetoresistance of 11% was found at room temperature, and its value increased with a decrease in temperature up to 36% at 4.8 K. The mechanism for large negative magnetoresistance is discussed.
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