Optical saturation of intersubband absorption in GaAs-Al x Ga1− x As quantum wells
1988; American Institute of Physics; Volume: 53; Issue: 2 Linguagem: Inglês
10.1063/1.100386
ISSN1520-8842
AutoresF. H. Julien, J.-M. Lourtioz, N. Herschkorn, D. Delacourt, Jean-Paul Pocholle, M. Papuchon, R. Planel, G. Le Roux,
Tópico(s)Semiconductor Lasers and Optical Devices
ResumoWe have investigated intersubband absorptions between the conduction ground state and the first excited state of two AlxGa1−xAs/GaAs/AlxGa1−xAs multiple quantum well structures with x=0.3 and 85 Å well width, and with x=0.57 and 96 Å well width. Small-signal measurements show absorption peaks at 10.45 and 10.15 μm, respectively. Under an intense resonant excitation from a pulsed CO2 laser, saturation of the intersubband absorption occurred. The saturation intensity is estimated to be 340±120 kW/cm2 for the first sample and 375±120 kW/cm2 for the second. From these values, we have deduced subband decay times of the order of 10.6±3.5 ps for the first sample and 15.5±5 ps for the second.
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