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Spin multiplicity and charge state of a silicon vacancy ( T V 2 a ) in 4 H -SiC determined by pulsed ENDOR

2005; American Physical Society; Volume: 72; Issue: 23 Linguagem: Inglês

10.1103/physrevb.72.235208

1550-235X

Norikazu Mizuochi, Satoshi Yamasaki, H. Takizawa, N. Morishita, Takeshi Ohshima, H. Itoh, T. Umeda, Junichi Isoya,

Semiconductor materials and devices

In this paper, we unambiguously re-determine the spin multiplicity of ${T}_{V2a}$ by pulsed electron nucleus double resonance technique. The ${T}_{V2a}$ center is one of the most commonly observed defects in $4H$-SiC, and its origin was identified as one belonging to a class of negatively charged silicon vacancy by means of continuous-wave electron paramagnetic resonance (EPR) and the two-dimensional nutation method of pulsed EPR technique. However, a model with the spin multiplicity of triplet $(S=1)$ and the neutral charge state has recently been suggested. Our result clearly shows that ${T}_{V2a}$ is a quartet spin $(S=3∕2)$ state and thus should be single-negatively charged $(\ensuremath{-}1)$.