Structure and electrical resistivity of rare-earth zinc bismuthides REZn1−xBi2 (RE=La, Ce, Pr)
2007; Elsevier BV; Volume: 451; Issue: 1-2 Linguagem: Inglês
10.1016/j.jallcom.2007.04.073
ISSN1873-4669
AutoresOksana Ya. Zelinska, Arthur Mar,
Tópico(s)Inorganic Chemistry and Materials
ResumoThe ternary rare-earth zinc bismuthides REZn1−xBi2 (RE = La, Ce, Pr) were synthesized by reaction of pure metals. Single-crystal X-ray diffraction studies showed that these compounds adopt a defect HfCuSi2-type structure (Pearson symbol tP8, space group P4/nmm, Z = 2). The structure refinement led to the final compositions LaZn0.52(1)Bi2 (a = 4.599(1) Å, c = 9.987(2) Å), CeZn0.47(1)Bi2 (a = 4.572(1) Å, c = 9.830(2) Å), and PrZn0.49(1)Bi2 (a = 4.554(1) Å, c = 9.745(1) Å). Severe strain in the Zn-centred tetrahedra as the structure is contracted leads to the development of split Bi1 sites in PrZn0.5Bi2. Resistivity measurements indicate metallic behaviour, with the occurrence of an abrupt decrease below 5 K for CeZn0.5Bi2.
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