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Effects of Y 2 O 3 on Temperature Stability of Acceptor-Doped BaTiO 3

2005; Institute of Physics; Volume: 44; Issue: 3R Linguagem: Inglês

10.1143/jjap.44.1310

1347-4065

Young Hoon Song, Jin Hyun Hwang, Young Ho Han,

Multiferroics and related materials

Effects of Y 2 O 3 on the temperature stability of acceptor-doped BaTiO 3 dielectrics were studied. The sample doped with 1 mol% Y 2 O 3 exhibited the highest dielectric constant. A substantial reduction in grain size was observed in the specimen with 1 mol% Y 2 O 3 (∼0.6 µm), compared with the undoped specimen (∼1.5 µm). Each specimen with greater than 1 mol% Y 2 O 3 showed a slight difference in grain size, compared with 1 mol% Y 2 O 3 . As the Y 2 O 3 content was increased, the Curie point progressively moved to higher temperatures. The addition of Y 2 O 3 improved the temperature dependence of the dielectric constants of the acceptor doped BaTiO 3 –Y 2 O 3 system over the entire temperature range studied (-55–150°C) and the temperature coefficient of capacitance curves satisfied the X8R requirements above 3 mol% Y 2 O 3 .