Portal de Periódicos da CAPES

A Generalization of the Child-Langmuir Relation for One-Dimensional Time-Dependent Diodes

1985; Institute of Electrical and Electronics Engineers; Volume: 32; Issue: 5 Linguagem: Inglês

10.1109/tns.1985.4333985

1558-1578

A. Kadish, W. Peter, Michael E. Jones,

Electrostatic Discharge in Electronics

The steady-state Child-Langmuir relation between current and applied voltage has been a basic principle upon which all modern diode physics has been based. With advances in pulsed power technology and diode design, new devices which operate in vastly different parameter regimes have recently become of interest. Many of these devices cannot be said to satisfy the strict requirements necessary for Child-Langmuir flow. For instance, in a recent pulsed electron device for use in high-current accelerators, the applied voltage is sinusoidal in time. In another case, development of sources for heavy ion fusion necessitates understanding of transient current oscillations when the voltage is applied abruptly. We derive the time-dependent relationship between the emitted current and time-dependent applied voltage in a nonrelativistic planar diode. The relationship is valid for arbitrary voltage shapes V(t) applied to the diode for times less than the beam-front transit time across the gap. Using this relationship, transient and time-dependent effects in the start-up phase of any nonrelativistic diode can be analyzed.