Abnormal transconductance and transient effects in partially depleted SOI MOSFETs
1999; Elsevier BV; Volume: 43; Issue: 1 Linguagem: Inglês
10.1016/s0038-1101(98)00235-4
ISSN1879-2405
AutoresYonglin Zhang, D.K. Schroder, H.C. Shin, Seon‐Eui Hong, T. Wetteroth, S. R. Wilson,
Tópico(s)Integrated Circuits and Semiconductor Failure Analysis
ResumoA transconductance dip, observed in floating body partially depleted SOI devices, is due to transient effects and is reduced with a positive back bias in SOI nMOSFETs. MEDICI simulations show that both hole and electron densities near the front interface fluctuate during the turn-on transient, causing a small decrease and then an increase of the drain current that leads to the transconductance dip. Transient effects also cause an initial current ramp in IDS–VGS characteristics at the start of the gate voltage sweep when the back gate is inverted. The transient effect diminishes as the channel length and channel width decrease and as the back bias increases.
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