Studies of CdS single crystals made from the vapor phase
1982; Elsevier BV; Volume: 57; Issue: 2 Linguagem: Inglês
10.1016/0022-0248(82)90492-4
ISSN1873-5002
AutoresJun Morimoto, Tomoki Ito, Toshiaki Yoshioka, T. Miyakawa,
Tópico(s)Solid-state spectroscopy and crystallography
ResumoCdS single crystals (ϱ = 15–19 ω cm, μc = 110–270 cm2/V · s and n = (1.2–6.6) × 1015 cm3 were grown from the vapor phase where the Piper-Polich method was modified to simplify the crystal growth. The impurities in the crystals were investigated by SIMS and were found to be reduced by more than a factor of 102 compared with the remainder of the sintered CdS charge. SEM observations on the as-grown surfaces of the CdS single crystals show the existence of hexagonal spiral pits. These pits were found to correspond to dislocations in the bulk CdS crystals.
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