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Influence of exciton-phonon coupling on the energy position of the near-band-edge photoluminescence of ZnO nanowires

2006; American Institute of Physics; Volume: 89; Issue: 18 Linguagem: Inglês

10.1063/1.2364146

1520-8842

T. Voss, C. Bekeny, L. Wischmeier, H. Gafsi, S. Börner, Wolfgang Schade, A. Che Mofor, A. Bakin, A. Waag,

GaN-based semiconductor devices and materials

Room-temperature near-band-edge photoluminescence of ZnO is composed of contributions from free-exciton recombination and its longitudinal-optical phonon replica. By tracking the photoluminescence of ZnO nanowires from 4K up to room temperature, the authors show that the relative contributions of these emission lines show a strong variation for samples grown under different conditions. The varying coupling strengths of the excitons and phonons thus lead to a significant shift of the energy position of the room-temperature photoluminescence. They verify that this is not caused by laser heating or stress/strain but is most probably related to crystalline imperfections in the surface region.