High-power multiple-emitter AlGaAs superluminescent diodes
1985; American Institute of Physics; Volume: 47; Issue: 5 Linguagem: Inglês
10.1063/1.96143
ISSN1520-8842
AutoresT. L. Paoli, R. L. Thornton, R. D. Burnham, Donald L. Smith,
Tópico(s)Spectroscopy and Laser Applications
ResumoA superluminescent AlGaAs diode emitting 350 mW of cw optical power at room temperature has been demonstrated for the first time. This extraordinarily high power for nonlasing operation was achieved by combining efficient quantum well material with an edge-emitting, multiple-emitter, short (250 μm) Fabry–Perot cavity incorporating one highly reflective mirror. Lasing action is suppressed by applying a ZrO2 coating with an ultralow reflectivity to the laser’s output facet. Suppression of the lasing in this way produces the uniform and incoherent radiation pattern required for many applications.
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